主要特點:
刻蝕用托盤采用高純無壓燒結碳化硅陶瓷材料,具有硬度高,耐腐蝕、耐磨損,使用壽命長等特點,并且產品精度高、晶圓外延層刻蝕均勻性好。
Main features
The tray used for etching is made of high purity sintered silicon carbide ceramics without pressure.It has the characteristics of high hardness, corrosion resistance, wear resistance, long service life, high precision and good etching uniformity of wafer epitaxy layer.
應用領域:
應用于LED 晶圓芯片的外延層薄膜材料(GaN、SiO2 等)的ICP 刻蝕制程、半導體擴散用精密陶瓷零件及半導體晶圓的MOCVD 外延制程。
Application
ICP etching process of epitaxial film materials(GaN, SiO 2, etc.) for LED wafer chips, precision ceramic parts for semiconductor diffusion and MOCVD epitaxy process for semiconductor wafers.
規格型號:
我公司可按照客戶的需求提供相應陶瓷托盤產品,直徑范圍:Φ50~500mm。托盤盤厚度:3~20mm,并且可以根據客戶的要求進行設計和制造各種非標產品。
Specification:
Our company can provide the corresponding ceramic tray products according to the customer's needs, diameter range: 50~500mm. thickness:3~20mm, and can be designed and manufactured according to customer requirements of various non-standard products.
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